Spin-dependent transport in double ferromagnetic-gate graphene structures

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplo...

Spin-dependent transport and functional design in organic ferromagnetic devices

Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, wh...

Spin Transport and Spin Precession in Graphene

Spin degree of freedom of electrons is one of the alternative state variables under consideration for processing information, beyond the charge based CMOS technology. The potential of spintronics based research lies in the possibilities for a new generation of computers that can be non-volatile, faster, smaller, and capable of simultaneous data storage and processing all with reduced energy con...

Fully spin-dependent transport of triangular graphene flakes

Spin-dependent transport through interacting graphene armchair nanoribbons

We investigate spin effects in transport across fully interacting, finite size graphene armchair nanoribbons (ACNs) contacted to collinearly spin-polarized leads. In such systems, the presence of short ranged Coulomb interaction between bulk states and states localized at the ribbon ends leads to novel spin-dependent phenomena. Specifically, the total spin of the low energy many-body states is ...